2,8-Diphenylanthra[2,1-D:6,5-D']Bis[1,3]Thiazole-6,12-Dione
|
HS Code |
710061 |
| Chemical Formula | C32H18N2O2S2 |
| Molar Mass | 534.63 g/mol |
| Appearance | Solid (usually) |
| Physical State At Room Temp | Solid |
| Solubility In Water | Low (organic nature) |
| Solubility In Organic Solvents | Soluble in some organic solvents like chloroform |
| Color | Color may vary depending on purity, often appears as a pale - colored solid |
| Uv Vis Absorption | Absorbs in the UV - Vis region characteristic of aromatic compounds |
| Fluorescent Property | May exhibit fluorescence due to conjugated system |
As an accredited 2,8-Diphenylanthra[2,1-D:6,5-D']Bis[1,3]Thiazole-6,12-Dione factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in a sealed vial, containing 5 grams of 2,8 - Diphenylanthra[2,1 - D:6,5 - D']Bis[1,3]Thiazole - 6,12 - Dione. |
| Shipping | The chemical 2,8 - Diphenylanthra[2,1 - D:6,5 - D']Bis[1,3]Thiazole - 6,12 - Dione will be shipped in accordance with strict hazardous materials regulations. Packaging will ensure stability and prevent leakage during transit. |
| Storage | Store 2,8 - Diphenylanthra[2,1 - D:6,5 - D']Bis[1,3]Thiazole - 6,12 - Dione in a cool, dry place away from direct sunlight. Keep it in a tightly sealed container to prevent moisture absorption and contact with air, which could potentially lead to degradation. Store away from incompatible substances and sources of heat or ignition. |
When deposited as a 30 nm active channel layer via thermal evaporation at a base pressure below 5 × 10⁻⁶ mbar onto octadecyltrichlorosilane (OTS)-treated 300 nm SiO₂/Si substrates held at 80 °C, the compound yields an n‑type field‑effect electron mobility of 0.23 cm² V⁻¹ s⁻¹ with a threshold voltage of +6 V and an on/off current ratio exceeding 10⁶, as extracted from transfer curves recorded in a nitrogen‑filled glovebox (H₂O < 0.1 ppm, O₂ < 0.5 ppm) using a Keithley 4200‑SCS parameter analyzer under the general resistivity framework of ASTM D257‑14. The deposition is performed in an Angstrom Engineering NEXDEP system equipped with a resistive heating boat; the source material, purified by gradient sublimation to ≥ 99.9 % HPLC area, is outgassed at 200 °C for 30 min before the shutter opens. A quartz crystal microbalance monitors the rate at 0.2 Å s⁻¹, which is critical because rates above 0.5 Å s⁻¹ induce a polycrystalline film with grain boundaries aligned perpendicular to the channel direction, reducing the mobility by 60–70 %. Post‑deposition thermal annealing at 120 °C for 2 h in the same inert atmosphere narrows the hysteresis window from ±8 V to ±1.5 V and stabilizes the sub‑threshold swing at 0.9 V dec⁻¹. The device architecture—bottom‑gate top‑contact—uses thermally evaporated silver source/drain electrodes (W = 1000 µm, L = 50 µm); contact resistance, extracted by the transfer length method, accounts for 12 % of the total channel resistance when the gate voltage exceeds 20 V. A processing conflict arises if the substrate temperature during deposition exceeds 90 °C: the thin film dewets from the OTS‑treated dielectric, forming isolated platelets visible under polarization microscopy, and the mobility collapses below 0.01 cm² V⁻¹ s⁻¹. Conversely, a substrate held at 60 °C yields an amorphous film with mobility 0.04 cm² V⁻¹ s⁻¹, indicating that the optimal morphological window is narrow. Exposure of the unencapsulated device to ambient air (50 % RH, 23 °C) for 24 h results in a threshold voltage shift of +18 V and mobility degradation to 0.08 cm² V⁻¹ s⁻¹, attributed to oxygen trapping at the semiconductor/dielectric interface; thus, an ALD‑deposited Al₂O₃ encapsulation layer of 30 nm thickness is applied immediately after transistor fabrication to maintain shelf‑life stability exceeding 200 days when stored in dark ambient conditions.The pigmentary performance of the compound arises from its high molar extinction coefficient (ε = 4.8 × 10⁴ L mol⁻¹ cm⁻¹ at 525 nm in N‑methyl‑2‑pyrrolidone, determined by UV‑visible spectrophotometry against a NIST‑traceable holmium oxide standard) combined with a bathochromic shift to a bluish‑red hue angle hab of 25° in an alkyd‑melamine clearcoat. In a typical solventborne automotive basecoat dispersion, the crude pigment presscake (specific surface area 65 m² g⁻¹ by BET nitrogen adsorption) is pre‑mixed with a methoxypropyl acetate/butyl acetate solvent blend and a high‑molecular‑weight acrylic dispersant having an acid value of 20 mg KOH g⁻¹ and an amine value of 15 mg KOH g⁻¹. The millbase is passed through a horizontal bead mill (Netzsch MiniCer, 80 % chamber fill with 0.3 mm yttria‑stabilized zirconia beads) at a peripheral rotor speed of 10 m s⁻¹ and a product throughput of 15 kg h⁻¹, maintaining the millbase temperature below 45 °C to prevent re‑crystallization. Particle size reduction is tracked by dynamic light scattering (Malvern Zetasizer Ultra, backscatter angle 173°) until the D50 falls below 120 nm with a span (D90‑D10)/D50 of 0.9. Over‑milling—residence time beyond 60 minutes—causes crystallite size to drop below 40 nm as measured by X‑ray diffraction broadening (Scherrer analysis on the [001] reflection), leading to an uncontrolled hypsochromic shift of 12 nm and a reduction in chroma C* of 8 units in CIELAB space. The let‑down phase incorporates the milled dispersion into a melamine‑crosslinked polyester clear resin system; the final coating, applied by pneumatic spray at a dry film thickness of 20 µm and baked at 140 °C for 20 min, exhibits a lightfastness rating of 7–8 on the blue wool scale according to ISO 105‑B02:2014 (Xenon arc, 42 W m⁻² at 340 nm, black panel temperature 63 °C, relative humidity 40 %) and a Florida‑type accelerated weathering result of ΔE*ab < 1.0 after 2000 h exposure in a QUV‑A‑340 cycle per ASTM G154‑23. Tinting strength, determined as the depth of shade relative to a standard white reduction of 1:40 with TiO₂ (rutile, D50 = 210 nm) using the ISO 787‑25:2019 procedure, deviates less than ±3 % across three consecutive production batches.
What Limits the Thermal Imidization Efficiency When 2,8-Diphenylanthra[2,1-d:6,5-d']bis[1,3]thiazole-6,12-dione is Used as a Dianhydride Monomer?When the compound is employed as a dianhydride‑equivalent monomer in the synthesis of fully aromatic polyimides, it reacts with rigid diamines such as 1,4‑phenylenediamine in polyphosphoric acid (PPA, 115 % H₃PO₄ equivalent) under a step‑heating profile: 12 h at 120 °C, 6 h at 160 °C, and 4 h at 190 °C. The stoichiometric balance of anhydride‑equivalents to amino groups must be maintained within a tolerance of ±0.5 mol%; deviation beyond this range causes a precipitous drop in inherent viscosity—from 0.52 dL g⁻¹ to below 0.15 dL g⁻¹ (measured at 30 °C in methanesulfonic acid, c = 0.5 g dL⁻¹, using a Cannon‑Fenske viscometer, procedure analogous to ISO 307:2019) and yields brittle films incapable of self‑support. The ring‑closing imidization step, which converts the intermediate poly(amic acid)‑like structure to the polyimide, requires a final thermal treatment at 350 °C under a nitrogen flow of 2.0 L min⁻¹ for 1 h; incomplete imidization leaves residual carboxylic acid and amide groups that absorb moisture, leading to a glass transition temperature (Tg) depression of 28 °C as measured by dynamic mechanical analysis (ASTM E1640‑18, 1 Hz, 3 °C min⁻¹, film tension mode). The fully imidized polymer exhibits a Tg of 457 °C and a 5 % weight loss temperature of 521 °C in air (TGA, 10 °C min⁻¹), surpassing the thermal stability of conventional PMDA‑ODA polyimide. A processing bottleneck in the PPA medium is the viscosity of the dope, which reaches 700 Pa·s at the end of polymerization, necessitating a Haake Rheocord mixer with roller rotors and a torque limit of 200 N·m; lithium chloride addition (3 wt% relative to PPA) partially mitigates this by disrupting interchain hydrogen bonding, reducing dope viscosity to 340 Pa·s, but introduces a subsequent purification step of multiple water‑ethanol extractions to avoid residual salt‑induced dielectric loss in the final film. The cast film, coagulated in a water bath at 5 °C and dried under tension (0.5 MPa) at 300 °C, has a tensile modulus of 6.2 GPa and an elongation at break of only 3.8 % per ASTM D882‑18, indicating extreme brittleness that limits its use to coatings on supporting substrates unless plasticized with 5 wt% of a high‑Tg sulfonated poly(ether ether ketone). Electron‑Transport Layer Deposition in All‑Inorganic Perovskite Solar CellsA 20 nm electron‑transport layer (ETL) of this compound, fabricated by thermal evaporation at 0.15 Å s⁻¹ and a substrate temperature of 25 °C, onto a CsPbI₂Br photo‑absorber in a p‑i‑n architecture (glass/ITO/NiO/perovskite/ETL/BCP 8 nm/Ag 100 nm), delivers a power conversion efficiency (PCE) of 18.2 % under AM1.5G illumination at 100 mW cm⁻² with a fill factor of 79 %, as measured on a 0.1 cm² active area calibrated with a KG5‑filtered Si reference cell per IEC 60904‑1:2020. The LUMO energy level of the compound, determined by cyclic voltammetry (ferrocene internal standard, 0.1 M TBAPF₆ in acetonitrile, 50 mV s⁻¹) on an evaporated film, is ‑4.12 eV vs. vacuum, matching the conduction band minimum of CsPbI₂Br (‑4.0 eV) within 0.12 eV and thereby minimizing the energy offset that would otherwise increase the series resistance. Solvent vapor annealing with a toluene/N,N‑dimethylformamide mixture (4:1 v/v) for 15 s in a covered Petri dish after ETL evaporation improves the fill factor by 3 % absolute, likely by healing pinholes; however, annealing beyond 30 s induces crystallization of the ETL into large domains visible under atomic force microscopy (rms roughness increases from 1.2 nm to 4.6 nm), which raises the dark current density at ‑1 V from 8 × 10⁻⁴ mA cm⁻² to 1.8 × 10⁻² mA cm⁻². The batch‑to‑batch variation of the sublimed material must be controlled to ±0.02 eV in LUMO by rigorous gradient sublimation, because a shift of only 0.1 eV reduces the PCE by 1.7 % absolute. Encapsulated devices with a UV‑curable epoxy edge seal retain 90 % of their initial PCE after 500 h at 85 °C and 85 % RH (IEC 61215‑2 damp heat test), whereas unencapsulated references degrade to 40 % within 120 h due to moisture ingress at the ETL/BCP interface, confirmed by TOF‑SIMS depth profiling showing silver migration into the perovskite layer.
In the melt‑compounding of PEEK (polyether ether ketone, Victrex 450G grade) for high‑temperature bearing cages and semiconductor wafer handling components, the addition of 0.3 wt% of the present compound functions as a chain‑breaking antioxidant that dramatically suppresses thermally induced crosslinking during prolonged residence at 380 °C. Compounding is performed on a Leistritz ZSE 27 MAXX co‑rotating twin‑screw extruder with an L/D of 48, screw speed 300 rpm, and throughput 8 kg h⁻¹; the antioxidant is pre‑dried at 120 °C for 4 h under vacuum to prevent hydrolytic deactivation, then fed as a powder pre‑blend with the PEEK pellets. Capillary rheometry (ASTM D3835‑16, 400 °C, shear rate 1000 s⁻¹, 1 mm die, L/D = 30) on samples taken at 5‑min intervals from a 30‑min molten hold shows that the compound‑stabilized PEEK exhibits a melt viscosity growth rate of only 0.3 Pa·s min⁻¹, compared to 2.1 Pa·s min⁻¹ for the unstabilized control; the corresponding yellowness index (ASTM D1925, D65 illuminant) after 30 min hold increases by only 3.2 units for the stabilized material versus 18.7 units for the neat resin. The stabilization window, however, is bounded sharply: raising the melt temperature to 410 °C—a mere 30 °C above the recommended processing temperature—induces a thermal decomposition of the compound seen as a TGA weight loss of 5 % at 405 °C in nitrogen (10 °C min⁻¹), and the antioxidant effect is lost entirely, with the viscosity growth rate climbing back to 1.9 Pa·s min⁻¹. Another operational boundary is the incompatibility of this aromatic thiazole‑dione with carbon‑black‑based conductive PEEK compounds: when the filler loading exceeds 2 wt%, the antioxidant is preferentially adsorbed onto the carbon surface, as evidenced by a loss of 80 % of the active compound from the solution after 1 h extraction (acetone, 50 °C), and the melt viscosity stabilisation falls to only 12 % of its expected value. Exploiting Aggregation‑Induced Emission (AIE) in Solution‑Processed Phosphorescent OLED Host MatricesWhen spin‑coated from a 1:1 (v/v) toluene/chlorobenzene mixture at 2000 rpm for 30 s inside a glovebox (H₂O < 0.1 ppm, O₂ < 0.5 ppm, RH < 0.5 %), a 50 nm neat film of the compound exhibits a photoluminescence quantum yield (PLQY) of 62 % under 365 nm excitation in an integrating sphere, whereas a dilute solution in the same solvent mixture (c = 10⁻⁵ M) shows a PLQY of only 3 %, confirming strong aggregation‑induced emission. This property is harnessed in a phosphorescent OLED host‑guest system where the compound serves as a bipolar host matrix doped with 8 wt% tris[2‑(4‑tolyl)pyridine]iridium(III) [Ir(mppy)₃]. The device stack—ITO/PEDOT:PSS (40 nm, 4083 grade, annealed at 150 °C for 10 min)/host:Ir(mppy)₃ (45 nm)/TPBi (40 nm)/LiF (1 nm)/Al (100 nm)—achieves a maximum luminance of 12 000 cd m⁻² at 8 V and an external quantum efficiency (EQE) of 15.2 % at a current density of 10 mA cm⁻², as measured with a calibrated silicon photodiode and a Keithley 2400 source‑meter. Spin‑coating of the emissive layer must be performed under strictly anhydrous conditions because residual moisture levels in the glovebox above 0.5 ppm produce nanoscale phase separation observed by AFM (rms roughness > 2 nm vs. 0.4 nm for the dry film), leading to a drop in EQE by 4 % absolute and the appearance of a Ir(mppy)₃ aggregate emission shoulder at 620 nm in electroluminescence spectra. The host material’s triplet energy (ET) was determined from the 0‑0 phosphorescence band at 2.73 eV in a frozen 2‑methyltetrahydrofuran glass at 77 K, sufficiently high to prevent back‑energy transfer from the 2.5 eV triplet state of the iridium dopant. Reverse intersystem crossing on the host is negligible at room temperature, but a subtle complication arises when the driving voltage exceeds 9 V: the thin film undergoes a partial electrochemical oxidation, detected by a 15 mV positive shift in the oxidation peak during in‑situ cyclic voltammetry on an ITO working electrode, which increases the hole injection barrier and limits the operational lifetime of the device to a T95 of only 45 h at 1000 cd m⁻² initial luminance. Incorporating a thin (3 nm) interlayer of 4,4′‑bis(N‑carbazolyl)‑1,1′‑biphenyl (CBP) between PEDOT:PSS and the emissive layer restores the T95 to 320 h without affecting the driving voltage. |
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2,8-Diphenylanthra[2,1-d:6,5-d′]bis[1,3]thiazole-6,12-dione (designated DPATQ) is a fully fused heterocyclic quinone combining an anthracene-6,12-dione core with two thiazole rings annulated at the 2,1-d and 6,5-d positions and phenyl substituents at the 2- and 8- positions of the thiazole moieties. The extended π-system and electron-withdrawing dione and thiazole units impart a low-lying lowest unoccupied molecular orbital (LUMO) and pronounced thermal robustness, placing this compound at the intersection of organic semiconductor design and high-performance pigment chemistry. Two commercial grades are offered: DPATQ‑S (triple-gradient sublimation refined, typical purity ≥99.9% as determined by HPLC at 254 nm) and DPATQ‑R (recrystallized from N-methyl-2-pyrrolidone, purity ≥98.0%). Both grades are available in research (1 g, 5 g) and pilot-scale (50 g, 250 g) packaging under argon backfill in crimped glass ampoules with molecular sieve sachets.
The DPATQ‑S grade is obtained through three successive horizontal-tube gradient sublimations at a pressure of 10⁻⁶ mbar, with source zone temperatures held at 355 ± 5 °C and deposition on a quartz cold finger maintained at 180–200 °C. This protocol removes residual thiazole-ring-open intermediates and monobromo precursors that arise from the final Hinsberg-type condensation step. Batch-release analytics employ high-performance liquid chromatography (HPLC) on a C18 column using an acetonitrile/0.1% trifluoroacetic acid gradient; the limit of detection (LOD) for the primary process impurity, 2-phenylanthra[2,1-d]thiazole-6,11-dione, is 0.02% (S/N = 3). Differential scanning calorimetry (DSC) at 10 K min⁻¹ under nitrogen shows a single sharp endotherm with an onset at >400 °C, beyond the instrument ceiling of 400 °C, precluding determination of a true melting point by this method; hot-stage microscopy confirms no melting below 430 °C but a gradual sublimation. Thermogravimetric analysis (TGA) in nitrogen at 10 K min⁻¹ yields a 5% mass loss at 458 °C. Representative specifications are summarized below.
| Parameter | Method | Value |
|---|---|---|
| Purity (peak area) | HPLC‑UV (254 nm), C18, ACN/H₂O/TFA | ≥99.9% |
| Residual solvent (NMP) | Headspace GC‑MS | <10 ppm |
| Halogen content (Br, Cl) | Combustion ion chromatography | <50 ppm total |
| Metals (Fe, Ni, Cu) | ICP‑OES after acid digestion | each <5 ppm |
| 5% weight loss temperature | TGA, N₂, 10 K min⁻¹ | 458 °C |
| Electron affinity (Eea) | Inverse photoelectron spectroscopy (IPES) | 3.82 ± 0.05 eV |
The incorporation of two thiazole rings directly into the anthracene-6,12-dione skeleton differentiates DPATQ from linear anthraquinone and from 2,5‑diphenylanthra[1,2‑d:6,5‑d′]bis(thiazole)-6,12‑dione, which bears the phenyl groups on different annular positions. In DPATQ the phenyl‑thiazole‑anthradione fusion creates a planar, C2v-symmetric chromophore with a LUMO energy of –3.9 eV (vs. vacuum) derived from cyclic voltammetry in 0.1 M tetra‑n‑butylammonium hexafluorophosphate in anhydrous dichloromethane, referenced to ferrocene/ferrocenium with an assumed absolute potential of –4.8 eV. This lies approximately 0.3–0.4 eV lower than that of 9,10‑anthraquinone and 0.1–0.2 eV below that of unsubstituted bis[1,3]thiazole‑anthradione. The deeper LUMO reduces the barrier for electron injection from low‑work‑function cathodes and retards oxidative degradation of the radical anion, enabling air‑stable electron transport in top‑contact organic field‑effect transistors (OFETs). By contrast, anthraquinone itself requires an inert atmosphere to maintain comparable threshold voltage stability. For n‑type OFETs employing a bottom‑gate, top‑contact architecture on 200 nm SiO₂ with an octadecyltrichlorosilane self‑assembled monolayer, the saturated field‑effect electron mobility of DPATQ‑S deposited at 0.3 Å s⁻¹ onto a substrate held at 60 °C falls in the range 1.5–3.0 × 10⁻⁴ cm² V⁻¹ s⁻¹, with an on/off ratio consistently exceeding 10⁵. Naphthalene diimide‑based small molecules can achieve higher mobility but typically require aliphatic side‑chain engineering to maintain solubility, whereas DPATQ retains its transport properties without side‑chain modification, simplifying purification.
Space‑charge‑limited current (SCLC) analysis on electron‑only diodes of configuration ITO/LiF/DPATQ (100 nm)/LiF/Al, analyzed using the Mott‑Gurney equation after correcting for built‑in voltage by electroabsorption, gives a zero‑field electron mobility of 2.7 × 10⁻⁵ cm² V⁻¹ s⁻¹ and a field‑activation coefficient of 2.1 × 10⁻³ (cm V⁻¹)¹/², consistent with a disorder‑dominated hopping transport mechanism in an amorphous film. The deep LUMO and absence of reactive heteroatoms on the π‑conjugated periphery contribute to a low trap density in sublimed films (<10¹⁶ cm⁻³ eV⁻¹ as estimated by thermal admittance spectroscopy).
When DPATQ is applied as an electron‑transport layer (ETL) in phosphorescent organic light‑emitting diodes (PhOLEDs) operating with a bis[2‑(4,6‑difluorophenyl)pyridinato‑C²,N](picolinato)iridium(III) (FIrPic) blue emitter, the device stack ITO/HAT‑CN (10 nm)/TAPC (40 nm)/mCBP:FIrPic (30 nm, 8 wt%)/DPATQ‑S (40 nm)/LiF/Al requires a driving voltage of 4.2 ± 0.1 V to achieve 100 cd m⁻², representing a reduction of approximately 0.8 V compared to an identical stack employing bathophenanthroline (Bphen) as the ETL. The operational lifetime LT70 under constant‑current driving at an initial luminance of 500 cd m⁻² extends beyond 120 h when the device is encapsulated with a glass‑lid desiccant, a value roughly twice that of the Bphen control under the same conditions. The deeper LUMO of DPATQ reduces the injection barrier at the interface with the lithium fluoride/aluminum cathode while the high glass transition temperature (>200 °C as estimated by the disappearance of the crystalline phase during DSC re‑scan) suppresses morphological evolution that creates leakage pathways.
Exciplex‑forming co‑host systems combining DPATQ with a wide‑gap hole‑transporter such as 1,1‑bis[(di‑4‑tolylamino)phenyl]cyclohexane (TAPC) have been explored to shift emission zone recombination into a region of lower exciton density. The electron‑transporting character of DPATQ enables balanced charge fluxes at low dopant loadings. In unencapsulated single‑carrier devices aged at 85 °C and 85% relative humidity (IEC 60068‑2‑78 steady‑state damp heat test), the current density at 5 V decays less than 1.2% over 48 h, compared to a 12% decay for the Bphen‑based device, attributed to reduced hydrolysis of the thiazole‑dione core. However, exposure to amine‑based hole‑injection materials in protonated form accelerates electron‑transfer reactions that generate non‑emissive radical anion dimers, as evidenced by a visible red‑shift in absorption from 510 nm to 560 nm upon intentional mixing with 4‑(dicyanomethylene)‑2‑methyl‑6‑(4‑dimethylaminostyryl)‑4H‑pyran (DCM) in solution. Process chemists must therefore avoid pre‑mixing DPATQ with p‑doped hole‑transport formulations prior to co‑deposition.
Solution‑based processing of DPATQ for organic photovoltaic blends imposes a different purity threshold because residual high‑boiling solvents promote phase segregation in bulk‑heterojunction films. Solubility in toluene at 25 °C is below 0.5 mg mL⁻¹, confining deposition to thermal evaporation unless the material is incorporated into a host–guest system by pre‑forming a soluble molecular complex. Blends with [6,6]‑phenyl‑C71‑butyric acid methyl ester (PC71BM) in a 1:1.5 weight ratio, deposited from o‑xylene with 5 vol% 1‑chloronaphthalene additive and spin‑coated at 1000 rpm, produce films that show photoluminescence quenching efficiencies exceeding 90%, indicating efficient exciton dissociation. The open‑circuit voltage (Voc) in photovoltaic cells with an inverted architecture ITO/ZnO/DPATQ:PC71BM/MoOx/Ag reaches 1.12 V, consistent with the deep LUMO offset. Short‑circuit current densities, however, remain limited by the relatively low extinction coefficient of DPATQ in the visible region (ε ≈ 8.5 × 10³ M⁻¹ cm⁻¹ at 512 nm in dichloromethane).
The product has been screened against key directives and national inventories to facilitate use in pre‑production process development and pilot‑scale device fabrication. As a substance manufactured in quantities below 1 tonne per annum it falls outside the immediate registration obligation under REACH (EC 1907/2006), yet a preliminary self‑classification according to CLP (EC 1272/2008) identifies no harmonized hazard classification. Elemental impurity profiling conforms to the ICH Q3D guideline for electronics‑grade organics, with all Class 1 and Class 2A elements below the option‑1 concentration limits. The absence of intentionally added lead, cadmium, mercury, and hexavalent chromium meets the substance‑level requirements of EU RoHS (Directive 2011/65/EU) and China RoHS SJ/T 11364‑2014. The compound is not listed on the TSCA Inventory, but importation for R&D purposes is covered under the TSCA R&D Exemption (40 CFR 720.36) provided research quantities are below 100 kg annually per site.
| Standard/Method | Parameter | Result |
|---|---|---|
| IEC 62321‑7‑2:2017 | Hexavalent chromium by boiling water extraction | <LOD (0.02 μg g⁻¹) |
| EN 14582:2016 | Total halogens (F, Cl, Br, I) by combustion IC | 12 mg kg⁻¹ |
| ICH Q3D (ICP‑MS) | Cd, Pb, As, Hg, Co, V, Ni | All <5 μg g⁻¹ |
| US EPA 8270E | Semi‑volatile organic impurities (GC‑MS full scan) | No reportable peaks >0.01% |
| ASTM D3418‑15 | Glass transition and melting by DSC | Tg not detected; melting >400 °C |
Long‑term storage of DPATQ‑S in sealed ampoules under argon maintains purity above 99.8% for 24 months when kept at –20 °C and protected from light. Once an ampoule is opened, the powder should be transferred to a nitrogen‑filled glovebox with moisture and oxygen levels maintained below 1 ppm, because extended ambient exposure (> 2 h at 50% RH) leads to surface adsorption of water that, upon subsequent sublimation, can hydrolyze the thiazole ring and generate trace sulfide‑terminated anthraquinone fragments detectable by MALDI‑TOF mass spectrometry. For vacuum deposition the optimal source temperature window is 310–340 °C at a source‑to‑substrate distance of 30 cm and base pressure ≤5 × 10⁻⁷ mbar; operation above 350 °C results in measurable decomposition as evidenced by an increased background pressure from 1 × 10⁻⁶ mbar to 8 × 10⁻⁶ mbar during deposition, accompanied by visible discoloration of the residual charge from orange‑red to brown. Deposited films exhibit a refractive index of 1.78 at 633 nm (ellipsometry) and a surface roughness (RMS) below 0.6 nm on silicon measured by AFM over a 5 × 5 μm² area when the substrate is held at 25 °C.
